Diffusion mechanism study of arsenic in SiO2 using oxygen isotope 18O as a component element of matrix SiO2

被引：1
|
作者：
Tsunashima, Y [1 ]
Aoki, N [1 ]
机构：
[1] Toshiba Co Ltd, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan
来源：
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词：
D O I：
10.1109/IEDM.1997.650479
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The diffusion mechanism of arsenic (As) in SiO2 was studied by the diffusion of oxygen in SiO2 using isotope O-18 as a component element of the matrix oxide. The result suggests that As loosens SiO2 network bonds and drives a subsequent rearrangement of the network which enhances diffusion of As and oxygen in N-2 annealing. However 10% H-2 was added in N-2, As atoms were released from the network as a molecular form and were completely independent from the network rearrangement.
引用
收藏
页码：699 / 702
页数：4
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