THE DIFFUSION OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SIO2

被引：1

作者：

SHACHAMDIAMOND, Y ^{[1
]}

OLDHAM, WG ^{[1
]}

KAZEROUNIAN, R ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LABS,BERKELEY,CA 94720

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期

关键词：

D O I：

10.1007/BF02652102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：519 / 525

页数：7

共 50 条

[1] TIME-DEPENDENT DIFFUSION OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SIO2
YAMAJI, T
ICHIKAWA, F
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2365 - 2371
[2] DIFFUSION OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SIO2-FILMS
SINGH, R
MAIER, M
KRAUTLE, H
YOUNG, DR
BALK, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : 2645 - 2651
[3] DIFFUSION OF ION-IMPLANTED AS IN SIO2
VANOMMEN, AH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2708 - 2715
[4] DIFFUSION OF ION-IMPLANTED PHOSPHORUS WITHIN THERMALLY GROWN SIO2 IN O-2 AMBIENT
YAMAJI, T
ICHIKAWA, F
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 1981 - 1985
[5] DIFFUSION OF ION-IMPLANTED GA IN SIO2
VANOMMEN, AH
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1872 - 1879
[6] DIFFUSION OF ION-IMPLANTED IN AND TL IN SIO2
VANOMMEN, AH
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5220 - 5225
[7] DIFFUSION OF ION-IMPLANTED SB IN SIO2
VANOMMEN, AH
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 993 - 997
[8] FAST DIFFUSION COMPONENT OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SILICON DIOXIDE
LEE, ST
FELLINGER, P
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 189 - 191
[9] Cathodoluminescence and ion beam analysis of ion-implanted combinatorial materials libraries on thermally grown SiO2
Chen, CM
Pan, HC
Zhu, DZ
Hu, J
Li, MQ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 159 (1-2): : 81 - 88
[10] Diffusion of 18 elements implanted into thermally grown SiO2
Francois-Saint-Cyr, HG
Stevie, FA
McKinley, JM
Elshot, K
Chow, L
Richardson, KA
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) : 7433 - 7439

← 1 2 3 4 5 →