THE DIFFUSION OF ION-IMPLANTED ARSENIC IN THERMALLY GROWN SIO2

被引：1
|
作者：
SHACHAMDIAMOND, Y [1 ]
OLDHAM, WG [1 ]
KAZEROUNIAN, R [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LABS,BERKELEY,CA 94720
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期
关键词：
D O I：
10.1007/BF02652102
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：519 / 525
页数：7
相关论文
共 50 条
  • [31] ETCH RATE CHARACTERIZATION OF BORON-IMPLANTED THERMALLY GROWN SIO2
    SCHWETTM.FN
    DEXTER, RJ
    COLE, DF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1566 - 1570
  • [32] Strong photoluminescence of Sn-implanted thermally grown SiO2 layers
    Rebohle, L
    von Borany, J
    Skorupa, W
    Fröb, H
    Niedermeier, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (07) : 969 - 971
  • [33] Strong photoluminescence of Sn-implanted thermally grown SiO2 layers
    [J]. 2000, American Inst of Physics, Woodbury, NY, USA (77)
  • [34] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [35] Simulation of correlated diffusion of Si and B in thermally grown SiO2
    Uematsu, M
    Kageshima, H
    Takahashi, Y
    Fukatsu, S
    Itoh, KM
    Shiraishi, K
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5513 - 5519
  • [36] Diffusion and incorporation of Zr into thermally grown SiO2 on Si(100)
    Yamaoka, M
    Murakami, H
    Miyazaki, S
    [J]. APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 223 - 227
  • [37] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI
    EERNISSE, EP
    NORRIS, CB
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205
  • [38] CURRENT INJECTION MECHANISM IN ION-IMPLANTED SIO2 IN PRESENCE OF ELECTRONIC TRAPPING
    DEKEERSMAECKER, RF
    VANOVERSTRAETEN, RJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C293 - C293
  • [39] IR and EPR study of the Na ion-implanted SiO2/Si system
    Nagai, N
    Yamaguchi, Y
    Saito, R
    Hayashi, S
    Kudo, M
    [J]. APPLIED SPECTROSCOPY, 2001, 55 (09) : 1207 - 1213
  • [40] Characterization of Si+ ion-implanted SiO2 films and silica glasses
    Guha, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5210 - 5217
12345