The critical charge density in high voltage 4H-SiC thyristors

被引：11
|
作者：
Levinshtein, ME
Ivanov, PA
Mnatsakanov, TT
Yurkov, SN
Agarwal, AK
Palmour, JW
机构：
[1] Russian Acad Sci, Ioff Inst, St Petersburg 194021, Russia
[2] All Russia Electrotech Inst, Moscow 111250, Russia
[3] CREE Inc, Durham, NC 27703 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 04期
关键词：
silicon carbide; thyristor; switch-on; critical charge;
D O I：
10.1016/S0038-1101(02)00325-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The critical charge density in 2.6 kV 4H-SiC thyristors, n(cr), has been investigated in the temperature range from 300 to 500 K using gate-controlled switching and pulsed optical triggering. The n(cr) values furnished by these different techniques are in reasonable agreement. The nc, decreases monotonically from n(cr) similar to 10(16) cm(-3) at T = 300 K to n(cr) similar to 10(14) cm(-3) at T = 500 K. At room temperature, the n(cr) value found in this study for high-voltage SiC thyristors is an order of magnitude larger than that in low-voltage SiC thyristors with breakover voltage of 400 V, and is of the same order as that in the high-voltage power Si thyristors. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：699 / 704
页数：6
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