High-voltage lateral RESURF MOSFETs on 4H-SiC

被引：0
|
作者：
Chatty, K. [1 ]
Banerjee, S. [1 ]
Chow, T.P. [1 ]
Gutmann, R.J. [1 ]
Hoshi, M. [1 ]
机构：
[1] Rensselaer Polytechnic Inst, Troy, United States
来源：
Annual Device Research Conference Digest | 1999年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：44 / 45
相关论文
共 50 条
  • [1] Improved high-voltage lateral RESURF MOSFETs in 4H-SiC
    Banerjee, S
    Chatty, K
    Chow, TP
    Gutmann, RJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) : 209 - 211
  • [2] High-voltage lateral RESURF MOSFET's on 4H-SiC
    Chatty, K
    Banerjee, S
    Chow, TP
    Gutmann, RJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) : 356 - 358
  • [3] Design criteria of high-voltage lateral RESURF JFETs on 4H-SiC
    Sheng, K
    Hu, ST
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2300 - 2308
  • [4] Nitrogen vs. phosphorus as implant species for high-voltage lateral RESURF MOSFETs on 4H-SiC
    Chatty, K.
    Banerjee, S.
    Chow, T.P.
    Gutmann, R.J.
    [J]. Materials Science Forum, 2000, 338
  • [5] Nitrogen vs. phosphorus as implant species for high-voltage lateral RESURF MOSFETs on 4H-SiC
    Chatty, K
    Banerjee, S
    Chow, TP
    Gutmann, RJ
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1279 - 1282
  • [6] Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication
    Kawano, H
    Kimoto, T
    Suda, J
    Matsunami, H
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 809 - 812
  • [7] 4H-SiC lateral double RESURF MOSFETs with low ON resistance
    Noborio, Masato
    Suda, Jun
    Kimoto, Tsunenobu
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) : 1216 - 1223
  • [8] 4H-SiC lateral RESURF MOSFETs on carbon-face substrates
    Okamoto, M
    Suzuki, S
    Kato, M
    Yatsuo, T
    Fukuda, K
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 805 - 808
  • [9] Improved implanted RESURF MOSFETS in 4H-SiC
    [J]. Banerjee, S, 2000, IEEE, Piscataway, NJ, United States
  • [10] Design and implementation of RESURF MOSFETs in 4H-SiC
    Banerjee, S
    Chatty, K
    Chow, TP
    Gutmann, RJ
    [J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 715 - 718
12345