Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

被引：31
|
作者：
Banerjee, S [1 ]
Chatty, K [1 ]
Chow, TP [1 ]
Gutmann, RJ [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 05期
基金：
美国国家科学基金会;
关键词：
breakdown; lateral device; on-resistance; power MOSFET; RESURF; silicon carbide;
D O I：
10.1109/55.919231
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage lateral RESURF metal oxide semiconductor held effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 Omega -cm(2). The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide, Lighter RESURF doses and/or thicker gate asides are required in SIC lateral MOSFETs to achieve highest breakdown voltage capability.
引用
收藏
页码：209 / 211
页数：3
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