The critical charge density in high voltage 4H-SiC thyristors

被引：11
|
作者：
Levinshtein, ME
Ivanov, PA
Mnatsakanov, TT
Yurkov, SN
Agarwal, AK
Palmour, JW
机构：
[1] Russian Acad Sci, Ioff Inst, St Petersburg 194021, Russia
[2] All Russia Electrotech Inst, Moscow 111250, Russia
[3] CREE Inc, Durham, NC 27703 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 04期
关键词：
silicon carbide; thyristor; switch-on; critical charge;
D O I：
10.1016/S0038-1101(02)00325-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The critical charge density in 2.6 kV 4H-SiC thyristors, n(cr), has been investigated in the temperature range from 300 to 500 K using gate-controlled switching and pulsed optical triggering. The n(cr) values furnished by these different techniques are in reasonable agreement. The nc, decreases monotonically from n(cr) similar to 10(16) cm(-3) at T = 300 K to n(cr) similar to 10(14) cm(-3) at T = 500 K. At room temperature, the n(cr) value found in this study for high-voltage SiC thyristors is an order of magnitude larger than that in low-voltage SiC thyristors with breakover voltage of 400 V, and is of the same order as that in the high-voltage power Si thyristors. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：699 / 704
页数：6
相关论文
共 50 条
  • [31] Factors influencing the design and performance of 4H-SiC GTO thyristors
    Fedison, JB
    Chow, TP
    Ghezzo, M
    Kretchmer, JW
    Nielsen, MC
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1391 - 1394
  • [32] The Temperature Coefficient of Threshold Voltage for High Voltage 4H-SiC FinFET
    Wang, Q.
    Udrea, F.
    Fujioka, H.
    Tomita, H.
    Nishiwaki, T.
    Kumazawa, T.
    Kumita, M.
    Okuda, M.
    Fujiwara, H.
    IEEE ELECTRON DEVICE LETTERS, 2025, 46 (03) : 334 - 336
  • [33] Factors influencing the design and performance of 4H-SiC GTO thyristors
    Fedison, J.B.
    Chow, T.P.
    Ghezzo, M.
    Kretchmer, J.W.
    Nielsen, M.C.
    Materials Science Forum, 2000, 338
  • [34] Feasibility of the Visible Light-Activation of 4H-SiC Thyristors
    Liu, Wentao
    Chen, Zhiming
    Li, Lianbi
    2012 7TH INTERNATIONAL CONFERENCE ON SYSTEM OF SYSTEMS ENGINEERING (SOSE), 2012, : 171 - 174
  • [35] Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors
    Maria Arshad
    Erum Jamil
    Ahmed Shuja
    Faraz Qayyum
    Gul Hassan
    Silicon, 2022, 14 : 10313 - 10325
  • [36] Optical triggering of 12 kV, 100 A 4H-SiC thyristors
    Rumyantsev, S. L.
    Levinshtein, M. E.
    Shur, M. S.
    Saxena, T.
    Zhang, Q. J.
    Agarwal, A. K.
    Palmour, J. W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (01)
  • [37] Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors
    Arshad, Maria
    Jamil, Erum
    Shuja, Ahmed
    Qayyum, Faraz
    Hassan, Gul
    SILICON, 2022, 14 (16) : 10313 - 10325
  • [38] Temperature dependence of turn-on process in 4H-SiC thyristors
    Dyakonova, NV
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    ELECTRONICS LETTERS, 1997, 33 (10) : 914 - 915
  • [39] Comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs
    Chilukuri, RK
    Shenoy, PM
    Baliga, BJ
    ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 115 - 118
  • [40] Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors
    Mnatsakanov, T. T.
    Yurkov, S. N.
    Levinshtein, M. E.
    Cheng, L.
    Palmour, J. W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (05)
12345