Study on a 0.13-μm CMOS Class-E 2.4 GHz Adjustable Power Amplifier for IoT Application

被引：0
|
作者：
Li, Jingxuan [1 ]
Wu, Yuming [1 ]
Lv, Xin [1 ]
机构：
[1] Beijing Inst Technol, Beijing Key Lab Millimeter Wave & Terahertz Techn, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China
来源：
2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年
基金：
北京市自然科学基金;
关键词：
Class-E; CMOS power amplifier; power control range;
D O I：
10.1109/ICMMT55580.2022.10023155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Power amplifier (PA) is one of the most power-consuming blocks in a transmitter. It is critical to improve power-added efficiency (PAE) in the design of a PA. This paper presents a 2.4 GHz class -E PA particularly designed with a two-stage architecture. The inverter driver stage outputs a full swing square wave to control the on-off of the power stage. By using cascode self-biased topology in the power stage, the peak drain-gate voltage is reduced and the problem caused by transistor breakdown voltage can be overcome. According to the post-simulated results, the proposed PA provides greater than 35% PAE while delivering adjustable saturation output power (Psat) between 9.3 and 17.6 dBm at the center frequency of 2.4 GHz in 0.13 mu m CMOS. In the maximum Psat state, the PAE is 40.6% with a 1.2V supply voltage and the optimum load resistance obtained in load-pull simulation.
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页数：3
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