A Highly Efficient 240-GHz Power Amplifier in 0.13-μm SiGe

被引：0
|
作者：
Balaban, Kaan [1 ]
Kaynak, Mehmet [2 ,3 ]
Ulusoy, Ahmet Cagri [1 ]
机构：
[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect IHE, D-76131 Karlsruhe, Germany
[2] IHP Microelect, D-15236 Frankfurt (oder), Germany
[3] Texas Instruments Inc, Kilby Labs, Dallas, TX 75243 USA
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 01期
关键词：
Power amplifiers; Silicon germanium; Gain; Inductance; Loss measurement; Baluns; Wireless communication; Cascade; efficiency; gm-boosting; millimeter wave (mm-wave) integrated circuits (ICs); power amplifiers (PAs); silicon-germanium (SiGe); WR3.4-band; GAIN;
D O I：
10.1109/LMWT.2023.3328934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the design and experimental characterization of a highly efficient WR3.4-band power amplifier (PA) using 0.13-mu m SiGe technology. The realized differential cascode PA demonstrates a high efficiency, owing to the gm-boosting technique which enables a relatively higher small-signal gain per stage. The proposed PA exhibits a saturated output power of 10.48 dBm with a maximum power-added-efficiency (PAE) of 5.46% at 240 GHz, which is a leading-edge performance among the reported silicon (Si)-based WR3.4-band PAs. The small-signal gain peaks at 24.1 dB and the PA has a 3-dB bandwidth of 21 GHz.
引用
收藏
页码：88 / 91
页数：4
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