A Broadband 75 to 140 GHz Amplifier in 0.13-μm SiGe HBT Process

被引：0
|
作者：
Ho, Ping-Han [1 ,2 ]
Lin, Yu-Hsuan [1 ,2 ]
Wang, Huei [1 ,2 ]
Meliani, Chafik [3 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan
[3] IHP, D-15236 Frankfurt, Oder, Germany
来源：
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年
关键词：
Silicon-germanium (SiGe); heterojunction bipolar transistor (HBT); D-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broadband amplifier from 75 to 140 GHz in SiGe 0.13-mu m process is designed, fabricated, and measured. To control the base current effectively, the current mirrors are applied in the amplifier to feed the base current. The measured results of the gain and return losses agree with the simulation. It provides average gain of 11 dB from 75 to 140 GHz and gain-bandwidth product of 231 GHz. To the author's knowledge, this amplifier exhibits the highest percentage bandwidth for Si-based MMIC amplifiers around 100 GHz except distributed amplifiers.
引用
收藏
页码：424 / 427
页数：4
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