A Highly Efficient 240-GHz Power Amplifier in 0.13-μm SiGe

被引：0

作者：

Balaban, Kaan ^{[1
]}

Kaynak, Mehmet ^{[2
,3
]}

Ulusoy, Ahmet Cagri ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect IHE, D-76131 Karlsruhe, Germany

[2] IHP Microelect, D-15236 Frankfurt (oder), Germany

[3] Texas Instruments Inc, Kilby Labs, Dallas, TX 75243 USA

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 01期

关键词：

Power amplifiers; Silicon germanium; Gain; Inductance; Loss measurement; Baluns; Wireless communication; Cascade; efficiency; gm-boosting; millimeter wave (mm-wave) integrated circuits (ICs); power amplifiers (PAs); silicon-germanium (SiGe); WR3.4-band; GAIN;

D O I：

10.1109/LMWT.2023.3328934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design and experimental characterization of a highly efficient WR3.4-band power amplifier (PA) using 0.13-mu m SiGe technology. The realized differential cascode PA demonstrates a high efficiency, owing to the gm-boosting technique which enables a relatively higher small-signal gain per stage. The proposed PA exhibits a saturated output power of 10.48 dBm with a maximum power-added-efficiency (PAE) of 5.46% at 240 GHz, which is a leading-edge performance among the reported silicon (Si)-based WR3.4-band PAs. The small-signal gain peaks at 24.1 dB and the PA has a 3-dB bandwidth of 21 GHz.

引用

页码：88 / 91

页数：4

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