Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

被引：0
|
作者：
Valenta, Vaclav [1 ]
Ulusoy, A. Cagri [1 ]
Trasser, Andreas [1 ]
Schumacher, Hermann [1 ]
机构：
[1] Inst Electron Devices & Circuits, Ulm, Germany
来源：
2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2013年
关键词：
Bipolar analog integrated circuits; Multiplying circuits; Millimeter wave devices;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance 110 GHz frequency quadrupler implemented in 0.13-mu m BiCMOS process is presented. The designed circuit is to be employed in an FMCW imaging radar system and is based on a cascade of two Gilbert cells with tuned loads connected as squarers. The differential input signal that is used for validation of the realized quadrupler is generated using an active on-chip balun with a limiting differential amplifier. Measurement results of the circuit prove that this approach to mm-wave frequency generation can provide operation with up to 25 GHz bandwidth along with high output power of 0 dBm.
引用
收藏
页码：9 / 11
页数：3
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