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- [1] A 230 GHz Quadrupler with 2 dBm Output Power in 90 nm SiGe BiCMOS Technology [J]. 2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 105 - 108
- [2] A 135-150 GHz Frequency Quadrupler with 0.5 dBm Peak Output Power in 55 nm SiGe BiCMOS technology [J]. 2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2015, : 186 - 189
- [3] A 213 GHz 2 dBm Output-Power Frequency Quadrupler with 45 dB Harmonic Suppression in 130 nm SiGe BiCMOS [J]. ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2021, : 447 - 450
- [4] Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process [J]. 2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 9 - 11
- [5] A 0.2 dBm 225 GHz Frequency Quadrupler with 330° Phase Control in 130 nm SiGe BiCMOS [J]. 2022 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 22), 2022, : 434 - 437
- [6] A Wideband 129-171 GHz Frequency Quadrupler Using a Stacked Bootstrapped Gilbert Cell in 0.13 μm SiGe BiCMOS [J]. 2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 158 - 161
- [7] Design of A 220GHz Frequency Quadrupler in 0.13-μm SiGe Technology [J]. 2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 81 - 84
- [8] A 60 GHz Frequency Doubler with 3.4-dBm Output Power and 4.4% DC-to-RF-Efficiency in 130-nm SiGe BiCMOS [J]. 2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 100 - 103
- [9] A+18dBm, 79-87.5GHz Bandwidth Power Amplifier in 0.13μm SiGe-BiCMOS [J]. 2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 17 - 20
- [10] A 21-27-GHz Frequency Quadrupler in 0.13μm SiGe BiCMOS with 0-dBm POUT and 40-dBc HRR for Wideband 5G Applications [J]. 2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, : 55 - 58