A 60-GHz fully-integrated doherty power amplifier based on 0.13-μm CMOS process

被引：0
|
作者：
Wicks, Byron [1 ]
Skafidas, Efstratios [1 ]
Evans, Rob [1 ]
机构：
[1] Univ Melbourne, Natl ICT Australia, Dept Elect & Elect Engn, Parkville, Vic 3010, Australia
来源：
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年
关键词：
CMOS millimeter wave integrated circuits; Doherty amplifier; millimeter wave amplifiers; power amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 Fun RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-chip. The prototype operating from a 1.6-V supply exhibits an output referred P,dB of 7.0 dB, a P-SAT of +7.8 dBm, with peak power gain of 13.5 dB, a 3-dB bandwidth of 6.7 GHz, and 3.0% PAE. The die area is 1.8 mm(2). This amplifier achieves the highest reported figure of merit for power amplifiers of any published millimeter-wave PA on CMOS.
引用
收藏
页码：59 / 62
页数：4
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