A Physically Based Scalable SPICE Model for Silicon Carbide Power MOSFETs

被引：0

作者：

He, Canzhong ^{[1
]}

Victory, James ^{[2
]}

Yazdi, Mehrdad Baghaie ^{[2
]}

Lee, Kwangwon ^{[3
]}

Domeij, Martin ^{[3
]}

Allerstam, Fredrik ^{[3
]}

Neyer, Thomas ^{[4
]}

机构：

[1] ON Semicond, Design Syst Technol, Mt Top, PA USA

[2] ON Semicond, Design Syst Technol, Dornach, Germany

[3] ON Semicond, Technol Dev, Kista, Sweden

[4] ON Semicond, Technol Dev, Dornach, Germany

来源：

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes a novel physical and scalable SPICE model for Silicon Carbide (SiC) power MOSFETs. The model is based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. One model applies to the entire technology instead of conventional discrete models for each device size and process variation. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with On Semiconductor's advanced 1200V SiC MOSFET technology.

引用

页码：2678 / 2684

页数：7

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