Transport through Single Dopants in Gate-All-Around Silicon Nanowire MOSFETs (SNWFETs)

被引：0
|
作者：
Hong, B. H. [1 ]
Jung, Y. C.
Hwang, S. W.
Cho, K. H. [2 ]
Yeo, K. H. [2 ]
Yeoh, Y. Y. [2 ]
Suk, S. D. [2 ]
Li, M. [2 ]
Kim, D. -W. [2 ]
Park, D. [2 ]
Oh, K. S. [2 ]
Lee, W. -S. [2 ]
机构：
[1] Korea Univ, Res Ctr Time Domain Nanofunct Devices, 5-1 Anam, Seoul 136701, South Korea
[2] Samsang Elect Co, Adv Technol Dev Team I, R&D Ctr, Giheung 446 711, South Korea
来源：
2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.
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页码：51 / +
页数：2
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