High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

被引：45

作者：

Candini, Andrea ^{[1
]}

Martini, Leonardo ^{[1
,2
]}

Chen, Zongping ^{[3
]}

Mishra, Neeraj ^{[4
]}

Convertino, Domenica ^{[4
,5
]}

Coletti, Camilla ^{[4
,6
]}

Narita, Akimitsu ^{[3
]}

Feng, Xinliang ^{[7
,8
]}

Muellen, Klaus ^{[3
]}

Affronte, Marco ^{[1
,2
]}

机构：

[1] CNR, Ist Nanosci, Ctr S3, Via G Campi 213-A, I-41125 Modena, Italy

[2] Univ Modena & Reggio Emilia, Dipartimento Sci Fis Matemat & Informat, Via G Campi 213-A, I-41125 Modena, Italy

[3] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany

[4] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy

[5] Scuola Normale Super Pisa, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy

[6] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy

[7] Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, D-01062 Dresden, Germany

[8] Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 19期

关键词：

CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; CARBON NANOTUBES; PHOTODETECTORS; PHOTOTRANSISTORS; HETEROJUNCTIONS; MOS2; GAIN;

D O I：

10.1021/acs.jpcc.7b03401

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 x 10(5) A/W for small incident power in the visible-UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.

引用

页码：10620 / 10625

页数：6

共 50 条

[1] Graphene nanoribbon field-effect transistor at high bias
Mahdiar Ghadiry
Razali Ismail
Mehdi Saeidmanesh
Mohsen Khaledian
Asrulnizam Abd Manaf
Nanoscale Research Letters, 9
[2] Graphene nanoribbon field-effect transistor at high bias
Ghadiry, Mahdiar
Ismail, Razali
Saeidmanesh, Mehdi
Khaledian, Mohsen
Abd Manaf, Asrulnizam
NANOSCALE RESEARCH LETTERS, 2014, 9
[3] Hysteresis in graphene nanoribbon field-effect devices
Tries, Alexander
Richter, Nils
Chen, Zongping
Narita, Akimitsu
Muellen, Klaus
Wang, Hai, I
Bonn, Mischa
Klaeui, Mathias
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (10) : 5667 - 5672
[4] A Review of Graphene Nanoribbon Field-Effect Transistor Structures
Sanna Lone
Anil Bhardwaj
Amit Kant Pandit
Sumeet Gupta
Shubham Mahajan
Journal of Electronic Materials, 2021, 50 : 3169 - 3186
[5] A Review of Graphene Nanoribbon Field-Effect Transistor Structures
Lone, Sanna
Bhardwaj, Anil
Pandit, Amit Kant
Gupta, Sumeet
Mahajan, Shubham
JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (06) : 3169 - 3186
[6] High-frequency properties of a graphene nanoribbon field-effect transistor
Ryzhii, M.
Satou, A.
Ryzhii, V.
Otsuji, T.
Journal of Applied Physics, 2008, 104 (11):
[7] Graphene antidot nanoribbon tunnel field-effect transistor
Xiao, Zhixing
MICRO & NANO LETTERS, 2022, 17 (08) : 169 - 174
[8] High-frequency properties of a graphene nanoribbon field-effect transistor
Ryzhii, M.
Satou, A.
Ryzhii, V.
Otsuji, T.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
[9] Super tiny nanoscale graphene nanoribbon field-effect transistor
Yi Zhijie
Shao Qingyi
Zhang Juan
CHINESE JOURNAL OF PHYSICS, 2019, 59 : 572 - 577
[10] Design and Implementation of ALU Using Graphene Nanoribbon Field-Effect Transistor and Fin Field-Effect Transistor
Florance, D. Rebecca
Prabhakar, B.
Mishra, Manoj Kumar
JOURNAL OF NANOMATERIALS, 2022, 2022

← 1 2 3 4 5 →