Spin-polarized transport through a ZnSe/Zn1-xMnxSe heterostructure under an applied electric field

被引：46
|
作者：
Guo, Y [2 ]
Wang, H
Gu, BL
Kawazoe, Y
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期
关键词：
D O I：
10.1063/1.1322070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate spin-dependent transport through a band-gap-matched ZnSe/Zn1-xMnxSe heterostructure with a single paramagnetic layer under influence of both an electric and a magnetic field. It is shown that the magnetic-field tunable potential and its symmetry in this system can be significantly modulated by the electric field, which results in obvious dependence of the magnitude of the electronic spin polarization on the electric field magnitude. The results obtained in this Work might shed light on the development of new electron-polarized devices. (C) 2000 American Institute of Physics. [S0021-8979(00)00524-7].
引用
收藏
页码：6614 / 6617
页数：4
相关论文
共 50 条
  • [31] Magnetic field induced type-I to type-II transition in ZnSe/Zn1-xMnxSe quantum wires
    Chen, ZH
    Saitou, T
    Shibata, K
    Sato, T
    Oka, Y
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1187 - 1188
  • [32] Magnetic-field-induced formation of exciton magnetic polarons in ZnSe/Zn1-xMnxSe quantum-well structures
    Rossin, VV
    Henneberger, F
    Puls, J
    [J]. PHYSICAL REVIEW B, 1996, 53 (24): : 16444 - 16452
  • [33] Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure
    Gnanasekar, K.
    Navaneethakrishnan, K.
    [J]. EUROPEAN PHYSICAL JOURNAL B, 2006, 53 (04): : 455 - 461
  • [34] Spin-polarized electron transport through a non-magnetic double barrier semiconductor heterostructure
    Gnanasekar, K
    Navaneethakrishnan, K
    [J]. PHYSICS LETTERS A, 2005, 341 (5-6) : 495 - 503
  • [35] Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure
    K. Gnanasekar
    K. Navaneethakrishnan
    [J]. The European Physical Journal B - Condensed Matter and Complex Systems, 2006, 53 : 455 - 461
  • [36] SPIN-POLARIZED TRANSPORT THROUGH GaAs/AlGaAs PARABOLIC QUANTUM WELL UNDER A UNIFORM MAGNETIC FIELD
    Wan, F.
    Jalil, M. B. A.
    Tan, S. G.
    Fujita, T.
    [J]. INTERNATIONAL JOURNAL OF NANOSCIENCE, 2009, 8 (1-2) : 71 - 74
  • [37] Effects of vertical electric field and charged impurities on the spin-polarized transport of β-antimonene armchair nanoribbons
    Touski, Shoeib Babaee
    Pilar Lopez-Sancho, M.
    [J]. PHYSICAL REVIEW B, 2021, 103 (11)
  • [38] Application of the elongation method to the electronic structure of spin-polarized molecular wire under electric field
    Yuuichi Orimoto
    Feng Long Gu
    Jacek Korchowiec
    Akira Imamura
    Yuriko Aoki
    [J]. Theoretical Chemistry Accounts, 2010, 125 : 493 - 501
  • [39] Application of the elongation method to the electronic structure of spin-polarized molecular wire under electric field
    Orimoto, Yuuichi
    Gu, Feng Long
    Korchowiec, Jacek
    Imamura, Akira
    Aoki, Yuriko
    [J]. THEORETICAL CHEMISTRY ACCOUNTS, 2010, 125 (3-6) : 493 - 501
  • [40] Spin-polarized quantum transport through a quantum dot in time-varying magnetic field
    Zhang, YP
    Liang, JQ
    [J]. PHYSICS LETTERS A, 2004, 329 (1-2) : 55 - 59
12345