Spin-polarized transport through a ZnSe/Zn1-xMnxSe heterostructure under an applied electric field

被引：46
|
作者：
Guo, Y [2 ]
Wang, H
Gu, BL
Kawazoe, Y
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期
关键词：
D O I：
10.1063/1.1322070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate spin-dependent transport through a band-gap-matched ZnSe/Zn1-xMnxSe heterostructure with a single paramagnetic layer under influence of both an electric and a magnetic field. It is shown that the magnetic-field tunable potential and its symmetry in this system can be significantly modulated by the electric field, which results in obvious dependence of the magnitude of the electronic spin polarization on the electric field magnitude. The results obtained in this Work might shed light on the development of new electron-polarized devices. (C) 2000 American Institute of Physics. [S0021-8979(00)00524-7].
引用
收藏
页码：6614 / 6617
页数：4
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