Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

被引：0
|
作者：
K. Gnanasekar
K. Navaneethakrishnan
机构：
[1] The American College,
[2] School of Physics,undefined
[3] Madurai-Kamaraj University,undefined
来源：
The European Physical Journal B - Condensed Matter and Complex Systems | 2006年 / 53卷
关键词：
85.75.Mm Spin polarized resonant tunnel junctions; 72.20.-i Conductivity phenomena in semiconductors and insulators; 73.40.Gk Tunneling; 73.63.Hs Quantum wells;
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学科分类号：
摘要：
Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.
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页码：455 / 461
页数：6
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