Spin-polarized hole transport through a diluted magnetic semiconductor heterostructure with magnetic-field modulations

被引:11
|
作者
Gnanasekar, K [1 ]
Navaneethakrishnan, K
机构
[1] Amer Coll, Madurai 625002, Tamil Nadu, India
[2] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
来源
EUROPHYSICS LETTERS | 2006年 / 73卷 / 05期
关键词
D O I
10.1209/epl/i2005-10456-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the spin-polarized transport of holes in symmetric and asymmetric diluted magnetic semiconductor heterostructures of CdTe/Cd1-xMnxTe under local magnetic field modulations. The effect of a type- I - to - type-II transition in the CdTe/Cd1-xMnxTe heterostructure is also used in our model. The spatially modulated magnetic field provides us with a new degree of freedom to control the degree of spin-polarized transport of holes. Our investigations show that spin-polarized transport of holes reaches 100% polarization with modulated weak magnetic field. This could be suitably engineered in the fabrication of perfect magnetic semiconductor spin-filters.
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页码:786 / 792
页数:7
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