Origin of asymmetric splitting of a neutral exciton in a single semiconductor quantum dot

被引：0

作者：

Suemune, I. ^{[1
,3
]}

Kumano, H. ^{[1
,3
]}

Kimura, S. ^{[1
]}

Sasakura, H. ^{[2
,3
]}

Adachi, S. ^{[2
,3
]}

Muto, S. ^{[2
,3
]}

Song, H. Z. ^{[3
,4
]}

Hirose, S.

Usui, T. ^{[3
,4
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010021, Japan

[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[4] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671611

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is well-recognized that exciton-state energy splitting makes it difficult to generate entangled photon pairs (EPP) from a single quantum dot (QD). It will be shown that the splitting of the exciton states originates from not only QD anisotropy but also ionization of residual impurities. This result shows that the growth of highly pure barrier layers will be necessary for the generation of EPP. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3908 / +

页数：2

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