Exciton spin relaxation in single semiconductor quantum dots

被引:66
|
作者
Tsitsishvili, E
von Baltz, R
Kalt, H
机构
[1] Univ Karlsruhe, Inst Theorie Kondensierten Mat, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[3] Acad Sci, Inst Cybernet, GE-380086 Tbilisi, Georgia
关键词
D O I
10.1103/PhysRevB.67.205330
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the relaxation of the exciton spin (longitudinal relaxation time T-1) in single asymmetrical quantum dots due to an interplay of the short-range exchange interaction and acoustic-phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field, and temperature. For typical quantum dots and temperatures below 100 K, the zero-magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor compounds.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Exciton spin relaxation in strongly confining semiconductor quantum dots
    Tsitsishvili, E.
    Kalt, H.
    [J]. PHYSICAL REVIEW B, 2010, 82 (19)
  • [2] Temperature dependence of exciton spin relaxation rates in semiconductor quantum dots
    Reznitsky, A.
    Klochikhin, A.
    Permogorov, S.
    Tenishev, L.
    Mironenko, K.
    Tsitsishvili, E.
    Baltz, R. v.
    Kalt, H.
    Klingshirn, C.
    [J]. PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1321 - +
  • [3] Exciton Fine Structure and Spin Relaxation in Semiconductor Colloidal Quantum Dots
    Kim, Jeongho
    Wong, Cathy Y.
    Scholes, Gregory D.
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 2009, 42 (08) : 1037 - 1046
  • [4] Exciton spin relaxation properties in zero dimensional semiconductor quantum dots
    Gotoh, H
    Kamada, H
    Ando, H
    Temmyo, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6A): : 3340 - 3349
  • [5] Spin relaxation in semiconductor quantum dots
    Khaetskii, AV
    Nazarov, YV
    [J]. PHYSICAL REVIEW B, 2000, 61 (19): : 12639 - 12642
  • [6] EXCITON RELAXATION AND RADIATIVE RECOMBINATION IN SEMICONDUCTOR QUANTUM DOTS
    BOCKELMANN, U
    [J]. PHYSICAL REVIEW B, 1993, 48 (23): : 17637 - 17640
  • [7] Fine structural splitting and exciton spin relaxation in single InAs quantum dots
    Dou, X. M.
    Sun, B. Q.
    Xiong, Y. H.
    Niu, Z. C.
    Ni, H. Q.
    Xu, Z. Y.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
  • [8] EXCITON SPIN RELAXATION IN InAs/GaAs QUANTUM DOTS
    Kurtze, H.
    Yakovlev, D. R.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    [J]. 11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [9] Spin relaxation quenching in semiconductor quantum dots
    Paillard, M
    Marie, X
    Renucci, P
    Amand, T
    Jbeli, A
    Gérard, JM
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (08) : 1634 - 1637
  • [10] Exciton relaxation in self-assembled semiconductor quantum dots
    Lelong, P
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 247 - 251