Origin of asymmetric splitting of a neutral exciton in a single semiconductor quantum dot

被引：0

作者：

Suemune, I. ^{[1
,3
]}

Kumano, H. ^{[1
,3
]}

Kimura, S. ^{[1
]}

Sasakura, H. ^{[2
,3
]}

Adachi, S. ^{[2
,3
]}

Muto, S. ^{[2
,3
]}

Song, H. Z. ^{[3
,4
]}

Hirose, S.

Usui, T. ^{[3
,4
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010021, Japan

[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[4] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671611

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is well-recognized that exciton-state energy splitting makes it difficult to generate entangled photon pairs (EPP) from a single quantum dot (QD). It will be shown that the splitting of the exciton states originates from not only QD anisotropy but also ionization of residual impurities. This result shows that the growth of highly pure barrier layers will be necessary for the generation of EPP. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3908 / +

页数：2

共 50 条

[21] Precise measurements of the dipole moment and polarizability of the neutral exciton and positive trion in a single quantum dot
Mar, J. D.
Baumberg, J. J.
Xu, X. L.
Irvine, A. C.
Williams, D. A.
PHYSICAL REVIEW B, 2017, 95 (20)
[22] Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
Shanks, Daniel N.
Mahdikhanysarvejahany, Fateme
Koehler, Michael R.
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
LeRoy, Brian J.
Schaibley, John R.
PHYSICAL REVIEW B, 2022, 106 (20)
[23] Exciton-Spin Memory with a Semiconductor Quantum Dot Molecule
de la Giroday, A. Boyer
Skoeld, N.
Stevenson, R. M.
Farrer, I.
Ritchie, D. A.
Shields, A. J.
PHYSICAL REVIEW LETTERS, 2011, 106 (21)
[24] Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot
Smith, JM
Dalgarno, PA
Warburton, RJ
Govorov, AO
Karrai, K
Gerardot, BD
Petroff, PM
PHYSICAL REVIEW LETTERS, 2005, 94 (19)
[25] Optically Induced Rotation of an Exciton Spin in a Semiconductor Quantum Dot
Poem, E.
Kenneth, O.
Kodriano, Y.
Benny, Y.
Khatsevich, S.
Avron, J. E.
Gershoni, D.
PHYSICAL REVIEW LETTERS, 2011, 107 (08)
[26] Analytical formulation for exciton in semiconductor quantum dot with parabolic confinement
Haddad, A. E. L.
CANADIAN JOURNAL OF PHYSICS, 2024, 102 (01) : 11 - 18
[27] Qubits based on the exciton degrees of freedom of a semiconductor quantum dot
Samartsev, V. V.
Mitrofanova, T. G.
XXII INTERNATIONAL YOUTH SCIENTIFIC SCHOOL COHERENT OPTICS AND OPTICAL SPECTROSCOPY, 2019, 1283
[28] Analytical formulation for exciton in semiconductor quantum dot with parabolic confinement
EL Haddad, A.
CANADIAN JOURNAL OF PHYSICS, 2023, : 11 - 18
[29] Neutral donor in a bilayer spherical semiconductor quantum dot
Gonzalez Acosta, J.
Joya, Miryam R.
Barba-Ortega, J.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2015, 29 (31):
[30] Control of indirect exciton population in an asymmetric quantum dot molecule
Voutsinas, Evangelos
Terzis, Andreas F.
Paspalakis, Emmanuel
PHYSICS LETTERS A, 2014, 378 (03) : 219 - 225

← 1 2 3 4 5 →