Failure Mode and Mechanism Analysis for Cu Wire Bond on Cu/Low-k Chip by Wire Pull Test and Finite-Element Analysis

被引：13

作者：

Che, Fa Xing ^{[1
]}

Wai, Leong Ching ^{[1
]}

Chai, Tai Chong ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 138634, Singapore

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2018年 / 18卷 / 02期

关键词：

Cu wire bond; failure mechanism; failure mode and criterion; finite element analysis; wire pull test; FILM STACKED STRUCTURES; DAMAGE; STRESS;

D O I：

10.1109/TDMR.2018.2808348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, failure mode and mechanism analysis on Cu wire bond and bond pad reliability for Cu/low-k chip are investigated through wire pull test and finite-element analysis (FEA). The wire pull test has been carried out for the bonded Cu wires with changing pull position to reveal different failure modes. Failed load is monitored and failure mode is analyzed for different wire pull test conditions. It is observed that the pull position influences failed pull force and failure mode. Failure modes include broken wire neck and wire wedge, ball lift, and pad peel and the failed force decreases with a changing pull location from the ball bond toward the wedge bond. FEA simulation is performed to help further understand failure mechanism and establish failure criteria. Finally, failure mechanism and criteria are presented for different failure modes and materials. In addition, the influence of wire loop height is also studied.

引用

页码：163 / 172

页数：10

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