Flexible Low-Voltage In-Zn-O Homojunction TFTs With Beeswax Gate Dielectric on Paper Substrates

被引：13
|
作者：
Jiang, Shuanghe [1 ]
Feng, Ping [1 ]
Yang, Yi [1 ]
Du, Peifu [1 ]
Shi, Yi [1 ]
Wan, Qing [1 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期
基金：
美国国家科学基金会;
关键词：
Flexible thin-film transistors; beeswax gate dielectrics; paper electronics; THIN-FILM TRANSISTORS; DOUBLE-LAYER TRANSISTORS; ELECTRONICS;
D O I：
10.1109/LED.2016.2518666
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium-zincoxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 mu F/cm(2) is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6 x 10(6), 86 mV/decade, and 14.6 cm(2) /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.
引用
收藏
页码：287 / 290
页数：4
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