Flexible Low-Voltage In-Zn-O Homojunction TFTs With Beeswax Gate Dielectric on Paper Substrates

被引：13
|
作者：
Jiang, Shuanghe [1 ]
Feng, Ping [1 ]
Yang, Yi [1 ]
Du, Peifu [1 ]
Shi, Yi [1 ]
Wan, Qing [1 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期
基金：
美国国家科学基金会;
关键词：
Flexible thin-film transistors; beeswax gate dielectrics; paper electronics; THIN-FILM TRANSISTORS; DOUBLE-LAYER TRANSISTORS; ELECTRONICS;
D O I：
10.1109/LED.2016.2518666
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium-zincoxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 mu F/cm(2) is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6 x 10(6), 86 mV/decade, and 14.6 cm(2) /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.
引用
收藏
页码：287 / 290
页数：4
相关论文
共 50 条
  • [41] Flexible Low-Voltage MXene Floating-Gate Synaptic Transistor for Neuromorphic Computing and Cognitive Learning
    Zhu, Jiahao
    Wang, Zifan
    Liu, Dexing
    Liu, Qi
    Wang, Wanting
    Wang, Xinwei
    Zhang, Min
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (40)
  • [42] Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO2 Gate Dielectric for Low-Voltage Applications
    Zhang, Yuqing
    Yang, Huan
    Peng, Hao
    Cao, Yunkai
    Qin, Ludong
    Zhang, Shengdong
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1459 - 1462
  • [43] Comparative Analysis of Compact Modeled of Low-Voltage OTFTs on Flexible and Silicon Substrates for the Implementation of Logic Circuits
    Singh Mehrolia, Mukuljeet
    Verma, Ankit
    Kumar Singh, Abhishek
    IEEE Journal on Flexible Electronics, 2024, 3 (07): : 341 - 347
  • [44] Amorphous In-Ga-Zn-O Dual-Gate TFTs: Current-Voltage Characteristics and Electrical Stress Instabilities
    Abe, Katsumi
    Takahashi, Kenji
    Sato, Ayumu
    Kumomi, Hideya
    Nomura, Kenji
    Kamiya, Toshio
    Kanicki, Jerzy
    Hosono, Hideo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (07) : 1928 - 1935
  • [45] Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics
    Dhananjay
    Krupanidhi, S. B.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [46] Highly stable, low-voltage operable high-mobility flexible organic thin-film transistors based on a tri-layer gate dielectric
    Qi, Weihao
    Xu, Qingling
    Zhang Yiqi
    Ding, Yin
    Su, Jing
    Wang, Wei
    FLEXIBLE AND PRINTED ELECTRONICS, 2022, 7 (01):
  • [47] Synaptic behavior of flexible IGZO TFTs with Al2O3 gate insulator by low temperature ALD
    Park, Shinyoung
    Jang, Jun Tae
    Choi, Sung-Jin
    Kim, Dong Myong
    Kim, Dae Hwan
    2019 IEEE 19TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO 2019), 2019, : 517 - 520
  • [48] Study of Low-Voltage Millimeter-Wave Tubes with Planar Slow-Wave Structures on Dielectric Substrates
    Ryskin, N. M.
    Benedik, A. I.
    Rozhnev, A. G.
    Sinitsyn, N. I.
    Torgashov, R. A.
    Torgashov, G. V.
    2017 10TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT), 2017,
  • [49] Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates
    Wang, Cheng-Yin
    Fuentes-Hernandez, Canek
    Liu, Jen-Chieh
    Dindar, Amir
    Choi, Sangmoo
    Youngblood, Jeffrey P.
    Moon, Robert J.
    Kippelen, Bernard
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (08) : 4804 - 4808
  • [50] Growth of n-type organic semiconductor for low-voltage transistors based on an ALD grown Al2O3 gate dielectric
    Na, Hanah
    Shin, Tae Joo
    Sim, Kyoseung
    Chirawatkul, Prae
    Kim, Sangwook
    Heo, Kwan-Jun
    Kim, Sung-Jin
    Pyo, Seungmoon
    SYNTHETIC METALS, 2013, 185 : 103 - 108
12345