Flexible Low-Voltage In-Zn-O Homojunction TFTs With Beeswax Gate Dielectric on Paper Substrates

被引：13

作者：

Jiang, Shuanghe ^{[1
]}

Feng, Ping ^{[1
]}

Yang, Yi ^{[1
]}

Du, Peifu ^{[1
]}

Shi, Yi ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期

基金：

美国国家科学基金会;

关键词：

Flexible thin-film transistors; beeswax gate dielectrics; paper electronics; THIN-FILM TRANSISTORS; DOUBLE-LAYER TRANSISTORS; ELECTRONICS;

D O I：

10.1109/LED.2016.2518666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium-zincoxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 mu F/cm(2) is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6 x 10(6), 86 mV/decade, and 14.6 cm(2) /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.

引用

页码：287 / 290

页数：4

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