Low-Voltage Poly-Si TFTs with Solution-Processed Aluminum Oxide Gate Dielectric

被引：3

作者：

Kang, In ^{[1
,2
]}

Avis, Christophe ^{[1
,2
]}

Kang, Dong Han ^{[1
,2
]}

Jang, Jin ^{[1
,2
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 08期

关键词：

aluminium compounds; carrier mobility; dielectric thin films; elemental semiconductors; insulated gate field effect transistors; plasma materials processing; semiconductor thin films; silicon; sol-gel processing; thin film transistors; THIN-FILM TRANSISTORS; ATOMIC LAYER DEPOSITION; TEMPERATURE; CIRCUITS; SILICON; STRESS; MICC;

D O I：

10.1149/1.3594094

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report a solution-processed aluminum oxide (AlO(x)) film which is used as a gate dielectric for low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs). After oxygen plasma treatment on the LTPS layer, AlO(x) layer could be uniformly coated on the poly-Si with a sol-gel method. The p-channel TFTs fabricated with an AlO(x) gate dielectric exhibited a field-effect mobility of 53.91 cm(2)/V s, threshold voltage of -1.7 V and gate voltage swing of 0.265 V/decade. A twenty-three stage ring oscillator made of the LTPS TFTs showed a switching speed of 1.32 MHz at a supply voltage of 15 V. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594094] All rights reserved.

引用

页码：J51 / J54

页数：4

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