Response of converter semiconductor detectors on neutron radiation

被引：9
|
作者：
Fehrenbacher, G [1 ]
Biersack, J
Cordes, E
Wahl, W
机构：
[1] GSF, Natl Res Ctr Environm Hlth, Inst Radiat Protect, D-85764 Neuherberg, Germany
[2] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
来源：
RADIATION MEASUREMENTS | 1997年 / 28卷 / 1-6期
关键词：
neutron dosemeter; electronic dosemeter; calculation of response functions; pin-diodes;
D O I：
10.1016/S1350-4487(97)00115-7
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Active detectors based on Si semiconductors are being developed for individual radiation protection purposes in mixed neutron and photon fields. These devices are constructed as combined converter semiconductor detectors. Incident neutrons interact with the converter or detector nuclei and produce charged particles that can deposit energy in the semiconductor and cause a signal. The aim of this work is the determination of the response of such detectors to incident neutrons by experiment and by computation. The computer model consists of the neutron interaction simulation and the calculation of the ion transport. An analysis of measured and computed pulse height distributions for 5 MeV incident neutrons is presented as well as a comparison.
引用
收藏
页码：429 / 434
页数：6
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