Response of converter semiconductor detectors on neutron radiation

被引：9
|
作者：
Fehrenbacher, G [1 ]
Biersack, J
Cordes, E
Wahl, W
机构：
[1] GSF, Natl Res Ctr Environm Hlth, Inst Radiat Protect, D-85764 Neuherberg, Germany
[2] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
来源：
RADIATION MEASUREMENTS | 1997年 / 28卷 / 1-6期
关键词：
neutron dosemeter; electronic dosemeter; calculation of response functions; pin-diodes;
D O I：
10.1016/S1350-4487(97)00115-7
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Active detectors based on Si semiconductors are being developed for individual radiation protection purposes in mixed neutron and photon fields. These devices are constructed as combined converter semiconductor detectors. Incident neutrons interact with the converter or detector nuclei and produce charged particles that can deposit energy in the semiconductor and cause a signal. The aim of this work is the determination of the response of such detectors to incident neutrons by experiment and by computation. The computer model consists of the neutron interaction simulation and the calculation of the ion transport. An analysis of measured and computed pulse height distributions for 5 MeV incident neutrons is presented as well as a comparison.
引用
收藏
页码：429 / 434
页数：6
相关论文
共 50 条
  • [31] Modelling the response of semiconductor based thermal neutron detectors with MCNP 6.2 and PHITS
    Bedogni, R.
    Calamida, A.
    Castro-Campoy, A., I
    Gomez-Ros, J. M.
    Lega, A.
    Moraleda, M.
    Pietropaolo, A.
    Altieri, S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 1018
  • [32] INVESTIGATION OF ANOMALY IN RESPONSE OF SILICON SEMICONDUCTOR RADIATION DETECTORS AT LOW TEMPERATURES
    DODGE, WR
    DOMEN, SR
    HIRSHFEL.AT
    HOPPES, DD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (01) : 295 - &
  • [33] Influence of fast neutron irradiation on signal response of CdTe radiation detectors
    Miyamaru, H
    Fujii, K
    Iida, T
    Takahashi, A
    JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 1996, 33 (09) : 744 - 746
  • [34] Response of neutron detectors to high-energy mixed radiation fields
    Mayer, S.
    Forkel-Wirth, D.
    Fuerstner, M.
    Menzel, H. G.
    Mueller, M. J.
    Perrin, D.
    Theis, C.
    Vincke, H.
    RADIATION PROTECTION DOSIMETRY, 2007, 125 (1-4) : 289 - 292
  • [35] ANOMALY IN RESPONSE OF SEMICONDUCTOR DETECTORS
    DODGE, WR
    DOMEN, SR
    HOPPES, DD
    HIRSHFELD, AT
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 238 - +
  • [36] LiInSe2 for Semiconductor Neutron Detectors
    Kargar, Alireza
    Hong, Huicong
    Tower, Joshua
    Gueorguiev, Andrey
    Kim, Hadong
    Cirignano, Leonard
    Christian, James F.
    Squillante, Michael R.
    Shah, Kanai
    FRONTIERS IN PHYSICS, 2020, 8
  • [37] SEMICONDUCTOR-DETECTORS FOR NEUTRON FIELD INVESTIGATION
    KOZLOV, SF
    KONOROVA, EA
    TIHOMIROVA, BA
    BOLSHAKOV, VV
    KONOPLEV, KA
    MOROZOV, VF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (01) : 238 - 239
  • [38] Development of semiconductor detectors for fast neutron radiography
    Klann, RT
    Fink, CL
    McGregor, DS
    Gersch, HK
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2001, 576 : 1118 - 1121
  • [39] Efficiencies of coated and perforated semiconductor neutron detectors
    Shultis, JK
    McGregor, DS
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (03) : 1659 - 1665
  • [40] Characterization of prototype perforated semiconductor neutron detectors
    Henderson, C. M.
    Jahan, Q. M.
    Dunn, W. L.
    Shultis, J. K.
    McGregor, D. S.
    RADIATION PHYSICS AND CHEMISTRY, 2010, 79 (02) : 144 - 150
12345