Ultralow-power smart temperature sensor with subthreshold CMOS circuits

被引：0

作者：

Ueno, Ken ^{[1
]}

Hirose, Tetsuya ^{[1
]}

Asai, Tetsuya ^{[1
]}

Amemiya, Yoshihito ^{[1
]}

机构：

[1] Hokkaido Univ, Dept Elect Engn, Sapporo, Hokkaido 0600814, Japan

来源：

2006 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATIONS, VOLS 1 AND 2 | 2006年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

We proposed a smart temperature sensor LSI consisting of subthreshold CMOS circuits. The sensor was composed of a bias circuit, a PTAT current generator, an A/D converter, and a counter circuit. All or the circuits were designed so that IMOSFETs in the circuits would operate in the subthreshold region to achieve ultralow power consumption. The PTAT current generator was the keN. component of the sensor and was constructed by using the characteristics of a MOSFET in the subthreshold region. Simulation with SPICE demonstrated that the circuit can be used as a smart temperature sensor with ultralow-power consumption of 6 mu W or less.

引用

页码：505 / +

页数：2

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