Essential strategies for the growth of high-quality (Al, Ga)N/GaN and GaN/(In, Ga)N heterostructures on SiC(0001) by molecular beam epitaxy

被引：0

作者：

Brandt, O ^{[1
]}

Muralidharan, R ^{[1
]}

Thamm, A ^{[1
]}

Waltereit, P ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirement of a high structural, morphological, optical and electrical quality. The results demonstrate that molecular beam epitaxy is a competitive technique for the growth of group m-nitrides.

引用

页码：1495 / 1506

页数：12

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