Impact of 4H- and 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy

被引：5

作者：

Kim, Tong-Ho ^{[1
]}

Choi, Soojeong

Brown, April S.

Losurdo, Maria

Bruno, Giovanni

机构：

[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[2] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy

[3] INSTM UdR Bari, I-70126 Bari, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.2220007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001)(Si) substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. (c) 2006 American Institute of Physics.

引用

页数：3

共 50 条

[1] Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)
Losurdo, M
Capezzuto, P
Bruno, G
Brown, A
Kim, TH
Yi, CY
Zakharov, DN
Liliental-Weber, Z
APPLIED PHYSICS LETTERS, 2005, 86 (02) : 021920 - 1
[2] Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001)
Lu, J
Haworth, L
Westwood, DI
Macdonald, JE
APPLIED PHYSICS LETTERS, 2001, 78 (08) : 1080 - 1082
[3] Suppression of spiral growth in molecular beam epitaxy of GaN on vicinal 6H-SiC(0001)
Cui, Y
Li, L
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 583 - 586
[4] Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxy
Kim, TH
Choi, SJ
Morse, M
Wu, P
Yi, CY
Brown, A
Losurdo, M
Giangregorio, MM
Bruno, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1181 - 1185
[5] Evolution of spirals during molecular beam epitaxy of GaN on 6H-SiC(0001)
Cui, Y
Li, L
PHYSICAL REVIEW B, 2002, 66 (15) : 1 - 6
[6] Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
Waltereit, P.
Lim, S.-H.
McLaurin, M.
Speck, J.S.
Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 524 - 527
[7] Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
Waltereit, P
Lim, SH
McLaurin, M
Speck, JS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 524 - 527
[8] GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy
Yoshimoto, M
Hatanaka, A
Itoh, H
Matsunami, H
JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 92 - 97
[9] Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001)
Thamm, A
Brandt, O
Takemura, Y
Trampert, A
Ploog, KH
APPLIED PHYSICS LETTERS, 1999, 75 (07) : 944 - 946
[10] Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy
Thamm, A
Brandt, O
Trampert, A
Ploog, KH
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 73 - 79

← 1 2 3 4 5 →