Essential strategies for the growth of high-quality (Al, Ga)N/GaN and GaN/(In, Ga)N heterostructures on SiC(0001) by molecular beam epitaxy

被引：0
|
作者：
Brandt, O [1 ]
Muralidharan, R [1 ]
Thamm, A [1 ]
Waltereit, P [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirement of a high structural, morphological, optical and electrical quality. The results demonstrate that molecular beam epitaxy is a competitive technique for the growth of group m-nitrides.
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页码：1495 / 1506
页数：12
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