Interfaces of CVD diamond films on silicon (001)

被引：0
|
作者：
Wittorf, D [1 ]
Jager, W
Jia, CL
Urban, K
Floter, A
Guttler, H
Zachai, R
机构：
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Univ Kiel, Tech Fak, D-24243 Kiel, Germany
[3] Daimler Benz AG, Forschungszentrum Ulm, D-89013 Ulm, Germany
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Interfaces and orientation relationships between diamond films, Si and beta-SiC interlayers were analyzed by conventional and high-resolution transmission electron microscopy for the early stages of film deposition on Si (001) substrates under optimized conditions using the microwave-assisted chemical vapour deposition process. Epitaxially oriented diamond nuclei form particularly on (111) facets of a nanocrystalline beta-SiC interlayer. A model describing the early stages of diamond film formation on (001)-oriented Si substrates via formation of a beta-SiC interlayer is presented.
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页码：451 / 456
页数：6
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