TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates

被引：19
|
作者：
Wurzinger, P [1 ]
Fuchs, N [1 ]
Pongratz, P [1 ]
Schreck, M [1 ]
Hessmer, R [1 ]
Stritzker, B [1 ]
机构：
[1] UNIV AUGSBURG,LEHRSTUHL EXPT PHYS 4,D-86135 AUGSBURG,GERMANY
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 5-7期
关键词：
TEM; heteroepitaxial nucleation; CVD diamond; (001) silicon substrates;
D O I：
10.1016/S0925-9635(96)00721-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A bias-enhanced nucleation process for the heteroepitaxial diamond growth by microwave plasma CVD on silicon is studied with TEM. Samples nucleated for different times are investigated and a time schedule of crystal phase formation is found: nanocrystalline beta-SiC with small statistical deviations from the heteroepitaxial orientation forms rapidly at the silicon substrate surface. The layer containing the nanocrystals grows and forms ridges parallel to the [110](Si) directions. Diamond nucleation occurs only on top of this layer, whereby the deviations from the heteroepitaxial orientation are taken over and extended. Finally, the beta-SiC side of the diamond crystals is etched by the plasma. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：752 / 757
页数：6
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