EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES

被引：291
|
作者：
JIANG, X [1 ]
KLAGES, CP [1 ]
ZACHAI, R [1 ]
HARTWEG, M [1 ]
FUSSER, HJ [1 ]
机构：
[1] DAIMLER BENZ AG,MAT RES,W-7900 ULM,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期
关键词：
D O I：
10.1063/1.109041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial (001) diamond film were grown on mirror-polished single-crystalline (001) silicon substrates by microwave plasma chemical vapor deposition from a methane/hydrogen gas mixture. The films were characterized by means of scanning electron microscopy, Raman spectroscopy, and x-ray analysis. The results show that the diamond crystallites are oriented to the silicon substrate with both the (001) planes and the [110] directions parallel to the silicon substrate.
引用
收藏
页码：3438 / 3440
页数：3
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