WetFET - A novel fluidic gate-dielectric transistor for sensor applications

被引：0
|
作者：
Lee, Donovan [1 ]
Sun, Xin [1 ]
Quevy, Emmanuel [1 ]
Howe, Roger T. [2 ]
Liu, Tsu-Jae King [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect & Comp Engn, Berkeley, CA 94720 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS | 2007年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：124 / +
页数：2
相关论文
共 50 条
  • [21] A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric
    Winterfeld, H.
    Thormaehlen, L.
    Lewitz, H.
    Yarar, E.
    Birkoben, T.
    Niethe, N.
    Preinl, N.
    Hanssen, H.
    Quandt, E.
    Kohlstedt, H.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (12) : 11493 - 11498
  • [22] Force and impulse multi-sensor based on flexible gate dielectric field effect transistor
    Tan, Chao
    Lue, Junling
    Zhang, Chunchi
    Liang, Dong
    Yang, Lei
    Wang, Zegao
    INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2025, 32 (01) : 214 - 220
  • [23] A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric
    H. Winterfeld
    L. Thormählen
    H. Lewitz
    E. Yarar
    T. Birkoben
    N. Niethe
    N. Preinl
    H. Hanssen
    E. Quandt
    H. Kohlstedt
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 11493 - 11498
  • [24] Force and impulse multi-sensor based on flexible gate dielectric field effect transistor
    Chao Tan
    Junling L
    Chunchi Zhang
    Dong Liang
    Lei Yang
    Zegao Wang
    International Journal of Minerals,Metallurgy and Materials, 2025, (01) : 214 - 220
  • [25] Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications
    Desbiens, E
    Dolbec, R
    El Khakani, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 1157 - 1161
  • [26] Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition
    J. Zhu
    Z.G. Liu
    M. Zhu
    G.L. Yuan
    J.M. Liu
    Applied Physics A, 2005, 80 : 321 - 324
  • [27] A Novel Low Power 3 Transistor based Universal Gate for VLSI Applications
    Priya, M. Geetha
    Baskaran, K.
    JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH, 2013, 72 (04): : 217 - 221
  • [28] Effect of the Degree of the Gate-Dielectric Surface Roughness on the Performance of Bottom-Gate Organic Thin-Film Transistors
    Geiger, Michael
    Acharya, Rachana
    Reutter, Eric
    Ferschke, Thomas
    Zschieschang, Ute
    Weis, Juergen
    Pflaum, Jens
    Klauk, Hagen
    Weitz, Ralf Thomas
    ADVANCED MATERIALS INTERFACES, 2020, 7 (10)
  • [29] Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition
    Zhu, J
    Liu, ZG
    Zhu, M
    Yuan, GL
    Liu, JM
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (02): : 321 - 324
  • [30] Effects of a Gate-Electrode/Gate-Dielectric Interlayer on Carrier Mobility for Pentacene Organic Thin-Film Transistors
    Ma, Yuan Xiao
    Tang, Wing Man
    Lai, Pui To
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (10) : 1516 - 1519
12345