Single-electron transistors based on self-assembled silicon-on-insulator quantum dots

被引:30
|
作者
Wolf, Conrad R. [1 ]
Thonke, Klaus [1 ]
Sauer, Rolf [1 ]
机构
[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany
关键词
Coulomb blockade; electrodes; electromigration; elemental semiconductors; masks; nanofabrication; self-assembly; semiconductor quantum dots; silicon; silicon-on-insulator; single electron transistors; sputter etching; ROOM-TEMPERATURE; FABRICATION; ISLAND;
D O I
10.1063/1.3383235
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
引用
下载
收藏
页数:3
相关论文
共 50 条
  • [31] Single-electron memory fabricated from doped silicon-on-insulator film
    Sakamoto, Toshitsugu
    Kawaura, Hisao
    Baba, Toshio
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (10): : 5851 - 4852
  • [32] Photoluminescence Studies of Silicon Self-Assembled Quantum Dots
    Sakrani, Samsudi
    Idrees, Fatima Aldaw
    Wahab, Yussof
    Othaman, Zulkafli
    Sumpono, Imam
    SOLID STATE SCIENCE AND TECHNOLOGY XXVI, 2012, 501 : 209 - 213
  • [33] Luminescence study of self-assembled, silicon quantum dots
    Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739-8527, Japan
    Mater Res Soc Symp Proc, (45-50):
  • [34] Silicon single-electron transistors and single-electron CCD
    Takahashi, Y
    Fujiwara, A
    Ono, Y
    Inokawa, H
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 181 - 191
  • [35] Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor
    Jung, Young Chai
    Cho, Keun Hwi
    Hong, Byoung Hak
    Son, Seung Hun
    Kim, Duk Soo
    Whang, Dongmok
    Hwang, Sung Woo
    Yu, Yuri Seop
    Ahn, David
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (05) : 544 - 550
  • [36] Luminescence study of self-assembled, silicon quantum dots
    Miyazaki, S
    Shiba, K
    Miyoshi, N
    Etoh, K
    Kohno, A
    Hirose, M
    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 : 45 - 50
  • [37] Single-electron memory fabricated from doped silicon-on-insulator film
    Sakamoto, T
    Kawaura, H
    Baba, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (10): : 5851 - 5852
  • [38] Single-electron quantum dots in silicon MOS structures
    Khoury, M
    Gunther, A
    Milicic, S
    Rack, J
    Goodnick, SM
    Vasileska, D
    Thornton, TJ
    Ferry, DK
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (04): : 415 - 421
  • [39] Single-electron quantum dots in silicon MOS structures
    M. Khoury
    A. Gunther
    S. Miličić
    J. Rack
    S.M. Goodnick
    D. Vasileska
    T.J. Thornton
    D.K. Ferry
    Applied Physics A, 2000, 71 : 415 - 421
  • [40] Single-electron spin-dependent transport in split-gate structures containing self-assembled quantum dots
    E. E. Vdovin
    Yu. N. Khanin
    P. L. Shabelnikova
    L. Eaves
    M. Henini
    Bulletin of the Russian Academy of Sciences: Physics, 2007, 71 (8) : 1124 - 1126