Single-electron transistors based on self-assembled silicon-on-insulator quantum dots

被引:30
|
作者
Wolf, Conrad R. [1 ]
Thonke, Klaus [1 ]
Sauer, Rolf [1 ]
机构
[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany
关键词
Coulomb blockade; electrodes; electromigration; elemental semiconductors; masks; nanofabrication; self-assembly; semiconductor quantum dots; silicon; silicon-on-insulator; single electron transistors; sputter etching; ROOM-TEMPERATURE; FABRICATION; ISLAND;
D O I
10.1063/1.3383235
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
引用
下载
收藏
页数:3
相关论文
共 50 条
  • [21] A self-assembled single-electron tunneling device
    Persson, SHM
    Olofsson, L
    Hedberg, L
    Sutherland, D
    Olsson, E
    MOLECULAR ELECTRONICS: SCIENCE AND TECHNOLOGY, 1998, 852 : 188 - 196
  • [22] A self-assembled single-electron tunneling transistor
    Persson, SHM
    Olofsson, L
    Gunnarsson, L
    APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2546 - 2548
  • [23] Growth of self-assembled In As quantum dashes and their applications to single electron transistors
    Shibata, K.
    Seki, K.
    Cha, K. M.
    Horiuchi, I.
    Hirakawa, K.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [24] Single spins in self-assembled quantum dots
    Warburton R.J.
    Warburton, R.J. (richard.warburton@unibas.ch), 2013, Nature Publishing Group (12) : 483 - 493
  • [25] Single spins in self-assembled quantum dots
    Warburton, Richard J.
    NATURE MATERIALS, 2013, 12 (06) : 483 - 493
  • [26] Spectroscopy of single self-assembled quantum dots
    Zrenner, A
    Findeis, F
    Beham, E
    Markmann, M
    Böhm, G
    Abstreiter, G
    JOURNAL OF LUMINESCENCE, 2000, 87-9 : 35 - 39
  • [27] Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method
    Kim, DH
    Sung, SK
    Sim, JS
    Kim, KR
    Lee, JD
    Park, BG
    Choi, BH
    Hwang, SW
    Ahn, D
    APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3812 - 3814
  • [28] Single-electron charging of a self-assembled II-VI quantum dot
    Seufert, J
    Rambach, M
    Bacher, G
    Forchel, A
    Passow, T
    Hommel, D
    APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3946 - 3948
  • [29] Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate
    Horibe, Kosuke
    Kodera, Tetsuo
    Oda, Shunri
    APPLIED PHYSICS LETTERS, 2015, 106 (08)
  • [30] Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands
    El kurdi, M
    Boucaud, P
    Sauvage, S
    Fishman, G
    Kermarrec, O
    Campidelli, Y
    Bensahel, D
    Saint-Girons, G
    Sagnes, I
    Patriarche, G
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1858 - 1861