Chemical properties of the Cu(In,Ga)Se2/MO/glass interfaces in thin film solar cells

被引：28
|
作者：
Weinhardt, L.
Blum, M.
Bar, M.
Heske, C.
Fuchs, O.
Umbach, E.
Denlinger, J. D.
Ramanathan, K.
Noufi, R.
机构：
[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 15期
关键词：
CuISe2; solar cells; back contact; Mo;
D O I：
10.1016/j.tsf.2006.12.109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Cu(In,Ga)Se-2/Mo and the Mo/glass interfaces in high efficiency thin film solar cells have been investigated by surface-sensitive photoelectron spectroscopy and bulk-sensitive X-ray emission spectroscopy. The interfaces were accessed by a suitable lift-off technique. Our experiments show a strong Se diffusion from the absorber into the Mo film, suggesting the formation of a MoSe2 layer in the surface-near region of the back contact. In addition, we find a Ga diffusion into the Mo back contact, while no diffusion of In and Cu occurs. Furthermore, we derive a detailed picture of the Na distribution near the back and front side of the Cu(In,Ga)Se, absorber. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：6119 / 6122
页数：4
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