Chemical properties of the Cu(In,Ga)Se2/MO/glass interfaces in thin film solar cells

被引：28

作者：

Weinhardt, L.

Blum, M.

Bar, M.

Heske, C.

Fuchs, O.

Umbach, E.

Denlinger, J. D.

Ramanathan, K.

Noufi, R.

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

CuISe2; solar cells; back contact; Mo;

D O I：

10.1016/j.tsf.2006.12.109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Cu(In,Ga)Se-2/Mo and the Mo/glass interfaces in high efficiency thin film solar cells have been investigated by surface-sensitive photoelectron spectroscopy and bulk-sensitive X-ray emission spectroscopy. The interfaces were accessed by a suitable lift-off technique. Our experiments show a strong Se diffusion from the absorber into the Mo film, suggesting the formation of a MoSe2 layer in the surface-near region of the back contact. In addition, we find a Ga diffusion into the Mo back contact, while no diffusion of In and Cu occurs. Furthermore, we derive a detailed picture of the Na distribution near the back and front side of the Cu(In,Ga)Se, absorber. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：6119 / 6122

页数：4

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