Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p-n junction

被引：25
|
作者：
Emel'yanov, AM [1 ]
Sobolev, NA
Yakimenko, AN
机构：
[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期
关键词：
D O I：
10.1063/1.121020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealed p-n junctions, characterized by higher values of the Er3+-related EL intensity at similar to 1.54 mu m in the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er-O codoped n layer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures. (C) 1998 American Institute of Physics. [S0003-6951(98)03910-2].
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收藏
页码：1223 / 1225
页数：3
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