TEMPERATURE-DEPENDENCE OF CAPACITANCE OF SILICON P-N STEP JUNCTIONS

被引：7

作者：

KATSUHATA, M ^{[1
]}

KOURA, K ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 11期

关键词：

D O I：

10.1143/JJAP.17.2063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2063 / 2064

页数：2

共 50 条

[1] TEMPERATURE-DEPENDENCE OF DEPLETION-LAYER CAPACITANCE OF P-N STEP JUNCTIONS
KATSUHATA, M
YOSHIDA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (03) : 565 - 566
[2] TEMPERATURE-DEPENDENCE OF THE CAPACITANCE OF P-N-JUNCTIONS IN SILICON-CARBIDE
IVANOV, PA
KACHOROVSKII, VY
MOROZENKO, YV
SUVOROV, AV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (07): : 761 - 763
[3] TEMPERATURE DEPENDENCE OF AVALANCHE CURRENT IN SILICON P-N JUNCTIONS
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[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (04) : 397 - &
[4] TEMPERATURE DEPENDENCE OF BREAKDOWN VOLTAGE IN SILICON ABRUPT P-N JUNCTIONS
CHANG, CY
CHIU, SS
HSU, LP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 391 - &
[5] CAPACITANCE OF P-N JUNCTIONS
CHNAG, JF
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 281 - &
[6] DEPENDENCE OF CAPACITANCE ON VOLTAGE FOR ALLOYED GAP P-N JUNCTIONS
MAMEDOVA, RF
NASLEDOV, DN
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 309 - &
[7] INVESTIGATION OF THE BARRIER CAPACITANCE OF DIFFUSED P-N JUNCTIONS IN SILICON
BERMAN, LS
SUBASHIEV, VK
[J]. SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1768 - 1770
[8] QUANTUM AND TEMPERATURE EFFECTS ON CAPACITANCE IN DEGENERATE P-N JUNCTIONS
PELLEGRINI, B
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1175 - +
[9] THE TEMPERATURE DEPENDENCE OF THE TUNNEL CURRENT IN P-N JUNCTIONS
VUL, BM
SHOTOV, AP
GRISHECHKINA, SP
[J]. SOVIET PHYSICS-SOLID STATE, 1961, 3 (02): : 489 - 491
[10] SILICON P-N JUNCTIONS AS LOW TEMPERATURE THERMOMETERS
UNSWORTH, J
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[J]. CRYOGENICS, 1966, 6 (04) : 239 - &

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