Improve the properties of n-ZnO/p-Si heterojunction by CuSCN buffer layer

Due to the mismatch between ZnO film and p-Si lattice, there are a large number of interface states which seriously affect the photoelectric properties of ZnO/p-Si heterojunction optoelectronic devices. In this research, ZnO thin films were deposited on p-Si by magnetron sputtering and ZnO/p-Si heterojunction was prepared. CuSCN film buffer layer was inserted into the interface of ZnO/p-Si heterojunction to reduce the interface state and improve the electric properties of heterojunction. The results show that the insertion of CuSCN films can effectively improve the interface state of ZnO/p-Si heterojunction, increase the forward current, reduce the reverse current and improve the heterojunction rectification ratio.