Improve the properties of n-ZnO/p-Si heterojunction by CuSCN buffer layer

被引：0
|
作者：
Xiong, Chao [1 ]
Chen, Lei [1 ]
Du, Wenhan [1 ]
Ma, Jinxiang [1 ]
Xiao, Jin [1 ]
Zhu, Xifang [1 ]
机构：
[1] Changzhou Inst Technol, Sch Elect & Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2017年 / 31卷 / 16-19期
基金：
中国国家自然科学基金;
关键词：
n-ZnO/p-Si heterojunction; ZnO films; CuSCN; interface states;
D O I：
10.1142/S0217979217440763
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Due to the mismatch between ZnO film and p-Si lattice, there are a large number of interface states which seriously affect the photoelectric properties of ZnO/p-Si heterojunction optoelectronic devices. In this research, ZnO thin films were deposited on p-Si by magnetron sputtering and ZnO/p-Si heterojunction was prepared. CuSCN film buffer layer was inserted into the interface of ZnO/p-Si heterojunction to reduce the interface state and improve the electric properties of heterojunction. The results show that the insertion of CuSCN films can effectively improve the interface state of ZnO/p-Si heterojunction, increase the forward current, reduce the reverse current and improve the heterojunction rectification ratio.
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页数：5
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