Improve the properties of n-ZnO/p-Si heterojunction by CuSCN buffer layer

被引：0
|
作者：
Xiong, Chao [1 ]
Chen, Lei [1 ]
Du, Wenhan [1 ]
Ma, Jinxiang [1 ]
Xiao, Jin [1 ]
Zhu, Xifang [1 ]
机构：
[1] Changzhou Inst Technol, Sch Elect & Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2017年 / 31卷 / 16-19期
基金：
中国国家自然科学基金;
关键词：
n-ZnO/p-Si heterojunction; ZnO films; CuSCN; interface states;
D O I：
10.1142/S0217979217440763
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Due to the mismatch between ZnO film and p-Si lattice, there are a large number of interface states which seriously affect the photoelectric properties of ZnO/p-Si heterojunction optoelectronic devices. In this research, ZnO thin films were deposited on p-Si by magnetron sputtering and ZnO/p-Si heterojunction was prepared. CuSCN film buffer layer was inserted into the interface of ZnO/p-Si heterojunction to reduce the interface state and improve the electric properties of heterojunction. The results show that the insertion of CuSCN films can effectively improve the interface state of ZnO/p-Si heterojunction, increase the forward current, reduce the reverse current and improve the heterojunction rectification ratio.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Photoelectric Properties of n-ZnO/p-Si Heterostructures
    Zainabidinov S.Z.
    Boboev A.Y.
    Makhmudov K.A.
    Abduazimov V.A.
    Applied Solar Energy (English translation of Geliotekhnika), 2021, 57 (06): : 475 - 479
  • [22] Studies On n-ZnO/p-Si Heterojunction Fabricated By Hydrothermal Method
    Shrisha, B., V
    Bhat, Shashidhara
    Naik, K. GopalaKrishna
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [23] Fabrication and Characterization of p-Si/n-ZnO Heterojunction Ultraviolet Photodetector
    Halder, Nripendra N.
    Biswas, Pranab
    Choudhuri, Arunavo
    Banerji, P.
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014), 2015, 1661
  • [24] Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes
    Shi, Zhifeng
    Zhao, Long
    Xia, Xiaochuan
    Zhao, Wang
    Wang, Hui
    Wang, Jin
    Dong, Xin
    Zhang, Baolin
    Du, Guotong
    JOURNAL OF LUMINESCENCE, 2011, 131 (08) : 1645 - 1648
  • [25] Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
    Zhao, Yang
    Wang, Hui
    Wu, Chao
    Li, Wancheng
    Gao, Fubin
    Wu, Guoguang
    Zhang, Baolin
    Du, Guotong
    OPTICS COMMUNICATIONS, 2015, 336 : 1 - 4
  • [26] Effects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340 K
    Senol Kaya
    Ercan Yilmaz
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 12170 - 12179
  • [27] Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray
    Zebbar, N.
    Kheireddine, Y.
    Mokeddem, K.
    Hafdallah, A.
    Kechouane, M.
    Aida, M. S.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 14 (3-4) : 229 - 234
  • [28] Electronic properties of n-ZnO(Al)/p-Si heterojunction prepared by dc magnetron sputtering
    Quemener, V.
    Vines, L.
    Monakhov, E. V.
    Svensson, B. G.
    THIN SOLID FILMS, 2011, 519 (17) : 5763 - 5766
  • [29] Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode
    Aksoy, Seval
    Caglar, Yasemin
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (05) : 613 - 625
  • [30] ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate
    Yakuphanoglu, Fahrettin
    Caglar, Yasemin
    Caglar, Mujdat
    Ilican, Saliha
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (03) : 137 - 140
12345