Effect of P plus region design on the fabrication of 6500 V 4H-SiC JBS diodes

被引：3

作者：

Sang, Ling ^{[1
]}

Tian, Lixin ^{[1
]}

Li, Jialin ^{[1
]}

Niu, Yingxi ^{[2
]}

Jin, Rui ^{[1
]}

机构：

[1] Global Energy Interconnect Res Inst Co Ltd, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 530卷

关键词：

Semiconducting materials; Semiconducting silicon compounds; Doping; Etching; Characterization; Computer simulation;

D O I：

10.1016/j.jcrysgro.2019.125317

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the effect of P+ region design on the simulation and fabrication of 6500 V 4H-SiC JBS diodes. There existed a deviation of 0.9 mu m in P+ region design between theoretical simulation and actual device during the fabrication. We mainly attributed this change of P+ region design to the implantation spreading and the mask etching processes. The simulation fitted well with the measured results considering the broadening of 0.9 mu m of P + region. According to the analysis, we calibrated the simulation and successfully fabricated the 6500 V/40A 4H-SiC JBS diodes. The simulation fitted very well with the performance of fabricated device.

引用

页数：5

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