2D modelling of nanoscale double gate silicon-on-insulator MOSFETs using conformal mapping

被引：24

作者：

Kolberg, Sigbjorn ^{[1
]}

Fjeldly, Tor A. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Univ Grad Ctr UniK, N-2027 Kjeller, Norway

来源：

PHYSICA SCRIPTA | 2006年 / T126卷

关键词：

D O I：

10.1088/0031-8949/2006/T126/013

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper presents important issues related to the two-dimensional (2D) modelling of nanoscale, fully depleted double-gate silicon-on-insulator (SOI) MOSFETs in subthreshold and near-threshold operation. The modelling is based on the solution of Laplace's equation for the rectangular body using conformal mapping techniques. The model yields solutions for the potential distribution in the body, with analytical expressions for the symmetry lines in the body interior from which threshold conditions and short-channel effects can be precisely described. Excellent agreement with numerical simulations is obtained.

引用

页码：57 / 60

页数：4

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